Silicon Darlington Transistors


(Listed in Order of Case Style descending Voltage, *TC = +25°C)

NTE Type No. Maximum
Continuous
Collector
Current

(Amps)
Maximum Breakdown Voltage Maximum
Continuous
Base
Current

(mA)
Typical
Forward
Current
Gain
Maximum
Collector
Power
Dissipation

(Watts)
Case
Style
NPN PNP Collector
to Base

(Volts)
Collector
to Emitter

(Volts)
Emitter
to Base

(Volts)
IC BVCBO BVCEO BVEBO IB hFE PD
98 - 20 700 (CEV) 500 8 2500 40 Min 175 *
TO3
99 - 50 600 400 8 10000 25 Min 250
97 - 10 500 400 8 2500 40 Min 150
2649 2650 15 200 200 5 1A 5000 Min 130 *
2349 2350 50 120 120 5 2A 2000 Min 300
2541 2542 25 120 120 (CER) 6 2A 2000 Min 120 *
247 248 12 100 100 5 200 750 Min 150 *
249 250 16 100 100 5 500 4000 150
251 252 20 100 100 5 500 2500 160
243 244 8 80 80 5 120 2500 100
245 246 10 80 80 5 200 4000 150
2335 - 5 60±15 60±15 6 - 2000 Min 80
215 - 8 110 100 6 - 4000 60
TO3P
214 - 10 70 60 6 - 5000 2.5
2682 2683 8 160 160 5 - 3500 Min 150 *
TO3PL
2558 - 15 1500 800 5 3A 25 Min 250 *
TO3PBL
2685 2686 8 160 150 5 1A 5000 Min 75 *
TO3PML
2559 2560 16 120 120 6 1A 2000 Min 75 *
274 275 4 80 80 5 80 3000 50
TO66
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