Power MOS Field Effect Transistor

NTE
Type
Number
Description
and
Application
Case
Style
Drain to
Source
Breakdown
Voltage
(Volts)
Gate to
Source
Cutoff
Voltage
(Volts)
Gate to
Source
Breakdown
Voltage
(Volts)
Maximum
Continuous
Drain
Current
(Amps)
Static
Drain to
on Source
Resistance
(Ohms)
Input
Capacitance
(pf)
Forward
Transfer
Admittance
(S)
Device
Total Power
Dissipation
@TC=25°C
(Watts)
BVDSS Vgs(Off) BVGSS ID rDS(On) Ciss |yfs| PD
2994 N-CHANNEL
Enhancement
Mode High
Speed Switch
- 450 Min 4.5 Max ±30 Max ±10 0.65 Max 950 Typ 3 Min 50 Max
td(off) = 70ns, td(on) = 25ns, tf = 50ns, tr = 70ns
2995 N-CHANNEL
Enhancement
Mode High
Speed Switch,
Zener Protected
TO220 600 Min 4.5 Max ±30 Max 10 0.75 Max 1370 Typ 7.8 Typ 115 Max
td(off) = 55ns, td(on) = 20ns, tf = 30ns, tr = 20ns
2996 N-CHANNEL
Enhancement
Mode High
Speed Switch
TO220 60 Min 4 Max ±20 Max 84 12 Max 3210 Typ 69 Min 200 Max
td(off) = 48ns, td(on) = 12ns, tf = 53ns, tr = 78ns
2997 P-CHANNEL
Enhancement
Mode High
Speed Switch,
Zener Protected
TO3P 160 Min 1.45 Max ±15 Max 7 - 900 Typ 0.7 Min * 100 Max
td(off) = 110ns, td(on) = 230ns
2998 P-CHANNEL
Enhancement
Mode High
Speed Switch
TO3 200 Min (DSX) 1.5 Max ±14 Max 8 - 734 Typ 0.7 Min * 125 Max
(Compl to NTE2906) td(off) = 60ns, td(on) = 120ns
2999 N-CHANNEL
Enhancement
Mode High
Speed Switch
TO220FN 500 Min 4.5 Max ±35 Max ±10 0.9 Max 950 Typ 2.5 Min * 50 Max
td(off) = 110ns, td(on) = 40ns, tf = 70ns, tr = 110ns
* Forward Transconductance
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