Power MOS Field Effect Transistor

NTE Type Number Description and Application Case Style Drain to Source Breakdown Voltage (Volts) Gate to Source Cutoff Voltage (Volts) Gate to Source Breakdown Voltage (Volts) Maximum Continuous Drain Current (Amps) Static Drain to on Source Resistance (Ohms) Input Capacitance (pf) Forward Transcon- ductance (mhos) Device Total Power Dissipation @TC=25°C (Watts) BVDSS Vgs(Off) BVGSS ID rDS(On) Ciss gfs PD 2940 N-CHANNEL Enhancement Mode High Speed Switch TO220 Full Pack 60 Min 4 Max ±20 Max 15 0.10 Max 635 Typ 5.6 Min 48 Max td(off) = 40ns, td(on) = 30ns, tf = 30ns, tr = 90ns 2941 N-CHANNEL Enhancement Mode High Speed Switch TO220 Full Pack 60 Min 4 Max ±20 Max 28 0.028 Max 2450 Typ 15 Min 48 Max td(off) = 75ns, td(on) = 32ns, tf = 130ns, tr = 210ns 2942 N-CHANNEL Enhancement Mode High Speed Switch TO220 Full Pack 100 Min 4 Max ±20 Max 9.7 0.16 Max 640 Typ 5.1 Min 35 Max td(off) = 35ns, td(on) = 15ns, tf = 36ns, tr = 51ns 2943 N-CHANNEL Enhancement Mode High Speed Switch TO220 Full Pack 100 Min 4 Max ±20 Max 17 0.077 Max 1500 Typ 13 Min 40 Max td(off) = 60ns, td(on) = 23ns, tf = 75ns, tr = 110ns 2944 N-CHANNEL Enhancement Mode High Speed Switch TO220 Full Pack 200 Min 4 Max ±20 Max 9.8 0.18 Max 1400 Typ 6 Min 40 Max td(off) = 80ns, td(on) = 30ns, tf = 60ns, tr = 60ns 2945 N-CHANNEL Enhancement Mode High Speed Switch TO220 Full Pack 450 Min 4 Max ±20 Max 5.5 0.55 Max 1500 Typ 5.8 Min 40 Max td(off) = 75ns, td(on) = 21ns, tf = 36ns, tr = 41ns 2946 N-CHANNEL Enhancement Mode High Speed Switch TO220 Full Pack 500 Min 4 Max ±20 Max 4.6 0.85 Max 1510 Typ 4 Min 40 Max td(off) = 49ns, td(on) = 14ns, tf = 20ns, tr = 23ns

Home  |   Back  |   Next  |   Previous