Power MOS Field Effect Transistor

NTE Type Number Description and Application Case Style Drain to Source Breakdown Voltage (Volts) Gate to Source Cutoff Voltage (Volts) Gate to Source Breakdown Voltage (Volts) Maximum Continuous Drain Current (Amps) Static Drain to on Source Resistance (Ohms) Input Capacitance (pf) Forward Transfer Admittance (S) Device Total Power Dissipation @TC=25°C (Watts) BVDSS Vgs(Off) BVGSS ID rDS(On) Ciss |yfs| PD 2953 N-CHANNEL Enhancement Mode High Speed Switch TO220FN 60 Min 4 Max ±20 Max 70 0.075 Max 6540 Typ 50 Min 35 Max td(off) = 290ns, td(on) = 95ns, tf = 210ns, tr = 195ns 2954 N-CHANNEL Enhancement Mode High Speed Switch TO220FN 100 Min 4 Max ±30 Max 90 0.10 Max 4730 Typ 72 Typ 83 Max td(off) = 304ns, td(on) = 52ns, tf = 355ns, tr = 492ns 2956 N-CHANNEL Enhancement Mode High Speed Switch TO220FN 500 Min 3.5 Max ±30 Max 14 0.64 Max 1500 Typ 11 Typ 35 Max td(off) = 190ns, td(on) = 25ns, tf = 50ns, tr = 40ns 2957 N-CHANNEL Enhancement Mode High Speed Switch TO220FN 700 Min 4 Max ±30 Max 5 2.6 Max 1500 Typ 2.5 Min 30 Max td(off) = 90ns, td(on) = 15ns, tf = 25ns, tr = 18ns 2958 N-CHANNEL Enhancement Mode High Speed Switch TO220FN 700 Min 4 Max ±30 Max 10 1.3 Max 1380 Typ 4.8 Min 40 Max td(off) = 170ns, td(on) = 25ns, tf = 55ns, tr = 33ns 2959 N-CHANNEL Enhancement Mode High Speed Switch TO220FN 900 Min 4 Max ±30 Max 5 2.8 Max 1050 Typ 3 Min 30 Max td(off) = 110ns, td(on) = 20ns, tf = 35ns, tr = 18ns

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